Polycrystalline silicon films obtained by hot-wire chemical vapour deposition
نویسندگان
چکیده
منابع مشابه
Microdoping compensation of microcrystalline silicon obtained by Hot-Wire Chemical Vapour Deposition
Undoped hydrogenated microcrystalline silicon was obtained by Hot-Wire Chemical Vapour Deposition at different silane-to-hydrogen ratios and low temperature (<300oC). As well as technological aspects of the deposition process, we report structural, optical and electrical characterisations of the samples that were used as the active layer for preliminary p-i-n solar cells. Raman spectroscopy ind...
متن کاملHot-wire chemical vapor deposition for epitaxial silicon growth on large- grained polycrystalline silicon templates
We investigate low-temperature epitaxial growth of thin silicon films by HWCVD on Si w1 0 0x substrates and polycrystalline template layers formed by selective nucleation and solid phase epitaxy (SNSPE). We have grown 300-nm thick epitaxial layers at 300 8C on silicon w1 0 0x substrates using a high H :SiH ratio of 70:1. Transmission electron microscopy confirms that the 2 4 films are epitaxial...
متن کاملGas phase and surface kinetic processes in polycrystalline silicon hot-wire chemical vapor deposition
Experiments and numerical simulations have been conducted to determine critical parameters for growth of polycrystalline silicon via hot-wire chemical vapor deposition. Reactor-scale simulations performed using the Direct Simulation Monte Carlo (DSMC) method have revealed a number of important phenomena such as a sharp drop of 1700 K in the gas temperature from the wire to substrate. The gas-ph...
متن کاملRemote plasma chemical vapour deposition of silicon nitride films
The relatively new technique of remote plasma enhanced
متن کاملInvestigations on doping of amorphous and nanocrystalline silicon films deposited by catalytic chemical vapour deposition
Hydrogenated amorphous and nanocrystalline silicon, deposited by catalytic chemical vapour deposition, have been doped during deposition by the addition of diborane and phosphine in the feed gas, with concentrations in the range of 1%. The crystalline fraction, dopant concentration and electrical properties of the films are studied. The nanocrystalline films exhibited a high doping efficiency, ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Applied Physics A Solids and Surfaces
سال: 1994
ISSN: 0721-7250,1432-0630
DOI: 10.1007/bf00331926